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| MMBT5401 MMBT5401 PNP General Purpose Amplifier * This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -150 -160 -5.0 -600 -55 ~ 150 Units V V V mA C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Condition IC = -1.0mA, IB = 0 IC = -100A, IE = 0 IE = -10A, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100C VEB= -3.0V, IC=0 IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, VCE = -10V, f = 100MHz VCB = -10V, IE = 0, f = 1MHz IC = -250A, VCE = -5.0V, RS = 1.0K f = 10Hz to 15.7KHz 100 50 60 50 Min. -150 -160 -5.0 -50 -50 -50 Max. Units V V V nA A nA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain On Characteristics * 240 -0.2 -0.5 -1.0 -1.0 300 6.0 8.0 V V V V MHz pF dB VCE (sat) VBE (sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small Signal Characterics fT Cob NF Current Gain Bandwidth Product Output Capacitance Noise Figure * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2004 Fairchild Semiconductor Corporation Rev. B1, August 2004 MMBT5401 Thermal Characteristics Ta=25C unless otherwise noted Symbol PD RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/C C/W (c)2004 Fairchild Semiconductor Corporation Rev. B1, August 2004 MMBT5401 Typical Characteristics VCESAT - COLLECTOR-EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN 200 0.4 VCE = 5V = 10 o 150 0.3 125 C o 100 0.2 o 25 C 125 C 25 C o 50 - 40 C o 0.1 - 40 C 1 10 100 o 0 1E-4 1E-3 0.01 0.1 1 0.0 0.1 IC - COLLECTOR CURRENT (A) IC - COLLECTOR CURRENT (mA) Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1.0 0.8 - 40 C 25 C o o VBC(ON) - BASE-EMITTER ON VOLTAGE (V) 1.0 VBESAT - BASE-EMITTER VOLTAGE (V) 0.8 - 40 C 25 C o o 0.6 0.6 125 C o 125 C o 0.4 0.4 = 10 100 VCE = 5V 0.2 0.1 1 10 0.2 0.1 1 10 100 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current 100 V CB = 10 0V BV CER - BREAKDOWN VOLTAGE (V) Between Emitter-Base 220 210 I CBO - COLLECTOR CURRENT (nA) 10 200 1 190 0.1 180 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (C) 150 170 0.1 1 10 100 1000 RESISTANCE (k ) Figure 5. Collector-Cutoff Current vs Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base (c)2004 Fairchild Semiconductor Corporation Rev. B1, August 2004 MMBT5401 Typical Characteristics (Continued) 700 80 60 PD - POWER DISSIPATION (mW) f = 1.0 MHz CAPACITANCE (pF) 600 500 400 300 200 100 0 0 25 50 75 100 o SOT-23 40 C eb 20 C cb 0 0.1 1 10 100 V R - REVERSE BIAS VOLTAGE(V) 125 150 TEMPERATURE ( C) Figure 7. Input and Output Capacitance vs Reverse Voltage Figure 8. Power Dissipation vs Ambient Temperature (c)2004 Fairchild Semiconductor Corporation Rev. B1, August 2004 MMBT5401 Package Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. B1, August 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I11 |
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